Name: MMBF2201NT1G
Brand: ON Semiconductor
SKU: MMBF2201NT1G
Price: 0.39000 USD
Availability: InStock

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MMBF2201NT1G

Manufacturer part number:MMBF2201NT1G

Manufacturer:ON Semiconductor

Description:MMBF2201NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MMBF2201NT1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 17 hours ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2000
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	1Ohm
Subcategory	FET General Purpose Powers
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	300mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Power Dissipation-Max	150mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150mW
Turn On Delay Time	2.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1 Ω @ 300mA, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	45pF @ 5V
Current - Continuous Drain (Id) @ 25°C	300mA Ta
Rise Time	2.5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	2.5 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	300mA
Threshold Voltage	1.7V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	20V
Nominal Vgs	1.7 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

MMBF2201NT1G Product Details

MMBF2201NT1G Description

MMBF2201NT1G belongs to the family of N-channel power MOSFETs that are manufactured by ON Semiconductor. It is ideally suitable for use in small power management circuitry because it is able to provide minimal power loss and conserve energy. Moreover, it is also well suited for dc?dc converters, and power management in portable and battery?powered products.