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MMBF170LT1G

MMBF170LT1G

MMBF170LT1G

ON Semiconductor

MMBF170LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBF170LT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 5Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating500mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Power Dissipation-Max 225mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation225mW
Turn On Delay Time10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 10V
Current - Continuous Drain (Id) @ 25°C 500mA Ta
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 500mA
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.5A
Drain to Source Breakdown Voltage 60V
Nominal Vgs 3 V
Height 940μm
Length 2.9mm
Width 1.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:21194 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.37000$0.37
500$0.3663$183.15
1000$0.3626$362.6
1500$0.3589$538.35
2000$0.3552$710.4
2500$0.3515$878.75

MMBF170LT1G Product Details

MMBF170LT1G Description

This FPCN announces the planned capacity expansion of ON Semiconductor's wafer operations of

TMOS7 products to their facility in Niigata Japan. Upon the expiration of this FPCN, TMOS7 devices

may be processed at either Niigata or existing location. These products have been qualified to commodity/commercial requirements.

These products will continue being Pb-free, Halide free and RoHS compliant.



MMBF170LT1G Features

NVBF Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC?Q101

Qualified and PPAP Capable

These Devices are Pb?Free and are RoHS Compliant


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