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MMBD352WT1G

  • MMBD352WT1G - Schottky - 1 Pair Series Connection 1pF @ 0V 1MHz -55°C~150°C TJ 3 Terminations SILICON 260 Tape & Reel (TR) SC-70, SOT-323
  • MMBD352WT1G - Schottky - 1 Pair Series Connection 1pF @ 0V 1MHz -55°C~150°C TJ 3 Terminations SILICON 260 Tape & Reel (TR) SC-70, SOT-323

MMBD352WT1G

MMBD352WT1G

ON Semiconductor

Schottky - 1 Pair Series Connection 1pF @ 0V 1MHz -55°C~150°C TJ 3 Terminations SILICON 260 Tape & Reel (TR) SC-70, SOT-323

SOT-23

MMBD352WT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 15 Weeks
Package / Case SC-70, SOT-323
Surface MountYES
Number of Pins 3
Diode Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.10.00.60
Subcategory Microwave Mixer Diodes
Voltage - Rated DC 7V
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating80mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBD352
Pin Count3
Number of Elements 2
Power Dissipation-Max 200mW
Element ConfigurationDual
Diode Type Schottky - 1 Pair Series Connection
Power Dissipation300mW
Forward Current10mA
Halogen Free Halogen Free
Forward Voltage600mV
Peak Reverse Current10μA
Max Repetitive Reverse Voltage (Vrrm) 7V
Capacitance @ Vr, F 1pF @ 0V 1MHz
Frequency Band ULTRA HIGH FREQUENCY
Diode Capacitance-Max 1pF
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:19436 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.171765$0.171765
500$0.126298$63.149
1000$0.105248$105.248
2000$0.096558$193.116
5000$0.090241$451.205
10000$0.083945$839.45
15000$0.081185$1217.775
50000$0.079828$3991.4

MMBD352WT1G Product Details

MMBD352WT1G Overview


RF diode is recommended that the system's forward voltage is kept above 600mV.For this part, the current rating is 80mA.

MMBD352WT1G Features




MMBD352WT1G Applications


There are a lot of ON Semiconductor
MMBD352WT1G applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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