MJD42CT4 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 3A 4V.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 600mA, 6A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -6A current rating.In this part, there is a transition frequency of 3MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
MJD42CT4 Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -6A
a transition frequency of 3MHz
MJD42CT4 Applications
There are a lot of ON Semiconductor MJD42CT4 applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
