MJD3055T4 Overview
DC current gain in this device equals 20 @ 4A 4V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.1V @ 400mA, 4A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 10A.The part has a transition frequency of 2MHz.There is a breakdown input voltage of 60V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
MJD3055T4 Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 400mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz
MJD3055T4 Applications
There are a lot of ON Semiconductor MJD3055T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
