MJ802G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 7.5A 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 800mV @ 750mA, 7.5A.Keeping the emitter base voltage at 4V allows for a high level of efficiency.Its current rating is 30A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 2MHz.In extreme cases, the collector current can be as low as 30A volts.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor MJ802G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
