MBRS1100T3G Description
In a large area metal-to-silicon power diode, Schottky Power Rectifiers use the Schottky Barrier principle. Modern geometry includes metal overlay contact, oxide passivation, and epitaxial fabrication. ideal for surface mount applications where compact size and weight are crucial to the system, low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
MBRS1100T3G Features
Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
High Blocking Voltage − 100 Volts
175°C Operating Junction Temperature
Guardring for Stress Protection
AEC−Q101 Qualified and PPAP Capable
These are Pb−Free Devices
MBRS1100T3G Applications
Case: Epoxy, Molded
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
Shipped in 12 mm Tape and Reel, 2,500 units per reel
Cathode Polarity Band
