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MBRD660CTT4G

MBRD660CTT4G

MBRD660CTT4G

ON Semiconductor

MBRD660CTT4G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available on our website

SOT-23

MBRD660CTT4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 13 hours ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 3
Diode Element Material SILICON
PackagingCut Tape (CT)
Published 2011
Series SWITCHMODE™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature175°C
Min Operating Temperature -65°C
Additional FeatureFREE WHEELING DIODE
HTS Code8541.10.00.80
Voltage - Rated DC 60V
Terminal Position SINGLE
Terminal FormGULL WING
Current Rating6A
Base Part Number MBRD660CT
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 2
Element ConfigurationCommon Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 100μA @ 60V
Voltage - Forward (Vf) (Max) @ If 700mV @ 3A
Forward Current6A
Max Reverse Leakage Current 100μA
Operating Temperature - Junction -65°C~175°C
Max Surge Current75A
Output Current-Max 3A
Application FAST RECOVERY POWER
Halogen Free Halogen Free
Forward Voltage900mV
Max Reverse Voltage (DC) 60V
Average Rectified Current3A
Number of Phases 1
Peak Reverse Current100μA
Max Repetitive Reverse Voltage (Vrrm) 60V
Peak Non-Repetitive Surge Current 75A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 75A
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7922 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.94000$0.94
500$0.9306$465.3
1000$0.9212$921.2
1500$0.9118$1367.7
2000$0.9024$1804.8
2500$0.893$2232.5

MBRD660CTT4G Product Details

MBRD660CTT4G Overview


A forward voltage of 900mV will enable the device to operate.An output voltage of 3A is the maximum it can handle.Keeping the surge current under 75A and preventing it from exceeding it should be the rule.The device operates when the forward voltage is set to 6A.Parts can be powered by currents of 6A.A reverse voltage peak of 100μA is used to power devices like this one.A semiconductor device's maximum reverse leakage current is 100μA, which is the current created by its reverse bias.

MBRD660CTT4G Features


900mV forward voltage
a maximum output voltage of 3A
a peak voltage of 100μA
a reverse voltage peak of 100μA

MBRD660CTT4G Applications


There are a lot of ON Semiconductor MBRD660CTT4G applications of rectifier diode array.

  • Free wheeling diode in low voltage converters
  • Crowbar applications
  • Battery chargers
  • Rectifiers for UBS
  • Rectifiers in switch mode power supplies (SMPS)
  • General Rectification
  • Rectifier for drives applications

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