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MBD770DWT1G

  • MBD770DWT1G - Schottky - 2 Independent 1pF @ 20V 1MHz -55°C~150°C TJ 6 Terminations SILICON 260 Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363
  • MBD770DWT1G - Schottky - 2 Independent 1pF @ 20V 1MHz -55°C~150°C TJ 6 Terminations SILICON 260 Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363

MBD770DWT1G

MBD770DWT1G

ON Semiconductor

Schottky - 2 Independent 1pF @ 20V 1MHz -55°C~150°C TJ 6 Terminations SILICON 260 Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363

SOT-23

MBD770DWT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
Package / Case 6-TSSOP, SC-88, SOT-363
Surface MountYES
Number of Pins 6
Diode Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Rectifier Diodes
Voltage - Rated DC 70V
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating90mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBD770
Pin Count6
Reference Standard AEC-Q101
Number of Elements 2
Max Current Rating 100mA
Power Dissipation-Max 380mW
Element ConfigurationDual
Diode Type Schottky - 2 Independent
Power Dissipation120mW
Forward Current100mA
Max Reverse Leakage Current 200nA
Halogen Free Halogen Free
Forward Voltage1V
Peak Reverse Current200nA
Max Repetitive Reverse Voltage (Vrrm) 70V
Capacitance @ Vr, F 1pF @ 20V 1MHz
Max Forward Surge Current (Ifsm) 1A
Frequency Band ULTRA HIGH FREQUENCY
Diode Capacitance-Max 1pF
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:14790 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.470631$0.470631
10$0.443992$4.43992
100$0.418859$41.8859
500$0.395151$197.5755
1000$0.372784$372.784

MBD770DWT1G Product Details

MBD770DWT1G Overview


A forward voltage of over 1V is recommended for the system.This part has a current rating of 90mA.

MBD770DWT1G Features




MBD770DWT1G Applications


There are a lot of ON Semiconductor
MBD770DWT1G applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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