KSH44H11TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 400mA, 8A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.The maximum collector current is 8A volts.
KSH44H11TF Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 50MHz
KSH44H11TF Applications
There are a lot of ON Semiconductor KSH44H11TF applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver