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KSH2955TM

KSH2955TM

KSH2955TM

ON Semiconductor

KSH2955TM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSH2955TM Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 9 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation1.75W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating-10A
Frequency 2MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number KSH2955
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.75W
Transistor Application AMPLIFIER
Gain Bandwidth Product2MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage60V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage-1.1V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -70V
Emitter Base Voltage (VEBO) -5V
hFE Min 20
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:29349 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.439416$0.439416
10$0.414543$4.14543
100$0.391079$39.1079
500$0.368942$184.471
1000$0.348059$348.059

KSH2955TM Product Details

KSH2955TM Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -1.1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -10A.The part has a transition frequency of 2MHz.Breakdown input voltage is 60V volts.A maximum collector current of 10A volts can be achieved.

KSH2955TM Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of -1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
a transition frequency of 2MHz

KSH2955TM Applications


There are a lot of ON Semiconductor KSH2955TM applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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