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KSD288WTU

KSD288WTU

KSD288WTU

ON Semiconductor

KSD288WTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD288WTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSD288
Power - Max 25W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA 5V
Current - Collector Cutoff (Max) 50μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 55V
Current - Collector (Ic) (Max) 3A
In-Stock:3029 items

KSD288WTU Product Details

KSD288WTU Overview


DC current gain in this device equals 40 @ 500mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100mA, 1A.Supplier package TO-220-3 contains the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

KSD288WTU Features


the DC current gain for this device is 40 @ 500mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the supplier device package of TO-220-3

KSD288WTU Applications


There are a lot of ON Semiconductor KSD288WTU applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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