KSD1616ALTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 100mA 2V.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 50mA, 1A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.In this part, there is a transition frequency of 160MHz.There is a breakdown input voltage of 60V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
KSD1616ALTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 160MHz
KSD1616ALTA Applications
There are a lot of ON Semiconductor KSD1616ALTA applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
