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J112

J112

J112

ON Semiconductor

J112 datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

J112 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 7 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Weight 200.998119mg
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2006
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -65°C
Voltage - Rated DC 35V
Max Power Dissipation625mW
Current Rating50mA
Base Part Number J112
Voltage 35V
Element ConfigurationSingle
Current 5A
Power Dissipation350mW
Power - Max 625mW
FET Type N-Channel
Breakdown Voltage-35V
Drain to Source Voltage (Vdss) 35V
Continuous Drain Current (ID) 5mA
Gate to Source Voltage (Vgs) -35V
Drain to Source Resistance 50Ohm
Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V
Voltage - Cutoff (VGS off) @ Id 1V @ 1μA
Voltage - Breakdown (V(BR)GSS) 35V
Resistance - RDS(On) 50Ohms
Height 5.33mm
Length 5.2mm
Width 4.19mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:13589 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.57000$0.57
10$0.40400$4.04
100$0.26670$26.67
500$0.15958$79.79

J112 Product Details

J112 Description
:
J112 is a J11x series high-performance N channel silicon FET or field effect transistor. Other transistors in this family include the JS111 and 112, which have similar functions but different specifications to meet specific needs. However, sample and hold applications, choppers, analog switching applications, commentators, current limiting, and other applications are the principal applications for these transistors.
There are also some advantages to using these transistors for specific applications, such as their suitability for high-speed switching, better frequency response, good accuracy, low insertion loss, and symmetrical feature, which allows the source and drain to be swapped. Aside from these advantages, they are also very inexpensive.
The transistor's maximum gate to source voltage is -35, maximum power dissipation is 625mW, and maximum continuous gate current is 50mA, according to its specifications. The TO-92 package and the tiny SOT-23 package are both available for these transistors.

J112 Features
:
Package Type: TO-92, SOT-23
Transistor Type: N Channel JFET (Symmetrical)
Maximum Drain to Gate Voltage: 35V
Maximum Reverse Gate to Source Voltage: –35V
Maximum Continues Gate Current: 50mA
Maximum Gate to Source Cutoff Voltage : –5 to –3V
Maximum Power Dissipation: 625mW
Max Storage & Operating temperature Should Be: -55 to +150 °C
Drain and source are exchangeable.

J112 Applications
:
Audio preamplifiers applications
High gain amplifiers circuits
Low level signal amplification applications
Sensor & detector applications
Current limiting circuits
Analog switching applications

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