IRF740B Description
These N-channel enhanced mode power field effect transistors IRF740B are produced using rairchiid's proprietary planar DMOS technology.This advanced technology is specifically tailored to minimize on-resistance, provides excellent switching performance, and withstands high energy pulses in avalanche and rectifier modes. These devices are very suitable for efficient switching mode power supplies and half-bridge-based electronic lamp ballasts.
IRF740B Features
·10A,400VRDs(on)=0.54Ω @VGs=10 V·Low gate charge(typical 41 nC)
·Low Crss(typical 35 pF) Fast switching
100% avalanche tested Improved dvidt capability
IRF740B Applications
efficient switching mode power supplies
half-bridge-based electronic lamp ballasts
