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FQPF5N60C_F105

FQPF5N60C_F105

FQPF5N60C_F105

ON Semiconductor

INTEGRATED CIRCUIT

SOT-23

FQPF5N60C_F105 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature-55°C~150°C TJ
PackagingTube
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 33W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5 Ω @ 2.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 670pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:3575 items

About FQPF5N60C_F105

The FQPF5N60C_F105 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features INTEGRATED CIRCUIT.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQPF5N60C_F105, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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