FQPF4N90 Description
These N-channel enhanced power field effect transistors are produced using Fairchild's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are very suitable for high efficiency switching mode power supply.
FQPF4N90 Features
? 2.5A, 900V, RDS(on) = 3.3 ? @ VGS = 10 V
? Low gate charge ( typically 24 nC)
? Low Crss ( typically 9.5 pF)
? Fast switching
? 100% avalanche tested
? Improved dv/dt capability
FQPF4N90 Applications
high efficiency switching mode power supply.
