Name: FQPF47P06YDTU
Brand: ON Semiconductor
SKU: FQPF47P06YDTU
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Formed Leads
Number of Pins	3
Weight	2.565g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2015
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	62W Tc
Element Configuration	Single
Power Dissipation	62W
Turn On Delay Time	50 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	26m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	450ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	195 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-60V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FQPF47P06YDTU Product Details

FQPF47P06YDTU Description

The FQPF47P06YDTU is a MOSFET – P-Channel, QFET®, -60 V, -30 A, 26 m. Onsemi's exclusive planar stripe and DMOS technologies are used to create this P-Channel enhancement mode power MOSFET. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. These components are appropriate for applications requiring variable switching power, DC motor control, audio amplifier, and switched mode power supplies.