FQP9N50 Description
FQP9N50 is a 500v N-Channel QFET? Power MOSFET. The N-Channel enhancement mode power field effect transistor FQP9N50 is produced using ON Semiconductors proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The onsemi FQP9N50 is well suited for high-efficiency switched-mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topology.
FQP9N50 Features
9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A
Low Gate Charge (Typ. 28 nC)
Low Crss (Typ. 24 pF)
100% Avalanche Tested
Improved dv/dt capability
FQP9N50 Applications
