FQP6N70 Description
The ON Semiconductor FQP6N70 is an N-Channel enhancement mode power field effect transistor that is manufactured utilizing the company's unique planar stripe, DMOS technology. This cutting-edge technology has been specifically designed to minimize on-state resistance, provide improved switching performance, and withstand high-energy pulses in avalanche and commutation modes.
FQP6N70 Features
100% avalanche tested
Improved dv/dt capability
6.2 A, 700V, RDS(on) = 1.5Ω @VGS = 10 V
Low gate charge ( typical 30 nC)
Low Crss ( typical 15 pF)
Fast switching
FQP6N70 Applications
