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FQP19N10

FQP19N10

FQP19N10

ON Semiconductor

FQP19N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQP19N10 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2000
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 75W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
In-Stock:1237 items

FQP19N10 Product Details

FQP19N10 Description

FQP19N10 N-Channel MOSFET is to be used in a variety of applications. FQP19N10 MOSFET is ideal for reducing resistance to on-state and offering better switching performance as well as being able to provide high avalanche energy. ON Semiconductor FQP19N10 is widely used in switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.

FQP19N10 Features

Low gate charge

Low Crss

13.6A, 100V, RDS(on) = 100mΩ

100% avalanche tested

Maximum junction temperature rating: 175°C

FQP19N10 Applications

Audio amplifier

Switching power applications

DC motor control

High-voltage applications


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