Name: FQP13N50
Brand: ON Semiconductor
SKU: FQP13N50
Availability: InStock

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FQP13N50

Manufacturer part number:FQP13N50

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 430m Ω @ 6.25A, 10V ±30V 2300pF @ 25V 60nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:FQP13N50 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Factory Lead Time	5 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	QFET®
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	430mOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	12.5A
Number of Elements	1
Power Dissipation-Max	170W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	170W
Turn On Delay Time	40 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	430m Ω @ 6.25A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12.5A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Rise Time	140ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	85 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	12.5A
Threshold Voltage	5V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	50A
Dual Supply Voltage	500V
Nominal Vgs	5 V
Height	6.35mm
Length	6.35mm
Width	6.35mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FQP13N50 Product Details

FQP13N50 Description

FQP13N50 N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. For switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts, FQP13N50 MOSFETs are appropriate.