FQH44N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQH44N10 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2004
Series
QFET®
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
180W Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
39m Ω @ 24A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C
48A Tc
Gate Charge (Qg) (Max) @ Vgs
62nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
JEDEC-95 Code
TO-247AB
Drain Current-Max (Abs) (ID)
48A
Drain-source On Resistance-Max
0.039Ohm
Pulsed Drain Current-Max (IDM)
192A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
530 mJ
RoHS Status
RoHS Compliant
In-Stock:2249 items
FQH44N10 Product Details
FQH44N10 Description
The FQH44N10 N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength.
