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FQB8N60CTM-WS

FQB8N60CTM-WS

FQB8N60CTM-WS

ON Semiconductor

MOSFET N-CH 600V 7.5A

SOT-23

FQB8N60CTM-WS Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.13W Ta 147W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2 Ω @ 3.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1255pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.5A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:4655 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$70.398279$70.398279
10$66.413471$664.13471
100$62.654218$6265.4218
500$59.107753$29553.8765
1000$55.762031$55762.031

About FQB8N60CTM-WS

The FQB8N60CTM-WS from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 600V 7.5A.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQB8N60CTM-WS, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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