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FQAF12N60

FQAF12N60

FQAF12N60

ON Semiconductor

Trans MOSFET N-CH 600V 7.8A 3-Pin(3+Tab) TO-3PF

SOT-23

FQAF12N60 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Supplier Device Package TO-3PF
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2000
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 100W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 700mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.8A Tc
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:2729 items

Pricing & Ordering

QuantityUnit PriceExt. Price
360$1.80453$649.6308

About FQAF12N60

The FQAF12N60 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 600V 7.8A 3-Pin(3+Tab) TO-3PF.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQAF12N60, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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