FQA28N50F Description
The N-Channel enhancement mode power field effect transistors were created utilizing the exclusive planar stripe DMOS process developed by Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These devices work well in basic full-bridge topologies, phase-shift ZVS, and high-efficiency switch mode power supply that utilize the body diode.
FQA28N50F Features
28.4A, 500V, RDS(on) = 0.16? @VGS = 10 V
Low gate charge ( typical 110 nC)
Low Crss ( typical 60 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Fast recovery body diode ( max, 250ns )
FQA28N50F Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
