Name: FQA22P10
Brand: ON Semiconductor
SKU: FQA22P10
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3PN
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	150W Tc
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	24A Tc
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V

FQA22P10 Product Details

FQA22P10 Description

These P-channel enhanced mode power field effect transistors are produced by Xiantong's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are ideal for low-voltage applications such as audio amplifiers, high-efficiency switching DC/DC converters and DC motor controls.