FQA13N50 Description
Using Fairchild's unique, planar stripe, DMOS technology, N-Channel enhancement mode ppower field effect transistors are created in the FQA13N50 format. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. FQA13N50 is a good choice for power factor correction, electronic light ballasts based on half bridges, and high efficiency switch mode power supplies.
FQA13N50 Features
Fast switching
100% avalache tested
Low Crss(typical 25pF)
Improved dv/dt capability
13.4A, 500V, Ros(on)=0.43Ω
Low gate charge(typical 45 nC)
FQA13N50 Applications
Industrial
Enterprise systems
Personal electronics
