FQA10N80C Description
The planar stripe and DMOS technologies developed by ON Semiconductor are used to create the FQA10N80C N-Channel enhancement mode power MOSFET. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. The FQA10N80C datasheet states that it can be used for active power factor correction (PFC), switching mode power supply, and electronic light ballasts.
FQA10N80C Features
RoHS compliant
Low Crss (Typ. 15 pF)
100% Avalanche Tested
Low Gate Charge (Typ. 44 nC)
10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A
FQA10N80C Applications
