FOD814A300 Description
The FOD814A300 is a 4-pin dual in-line package that houses two gallium arsenide infrared emitting diodes that are coupled in inverse parallel and drive a silicon phototransistor output. A silicon phototransistor is driven by a gallium arsenide infrared emitting diode in the FOD817 Series, which has a 4-pin dual inline package.
FOD814A300 Features
– UL1577, 5,000 VACRMS for 1 Minute
– DIN EN/IEC60747-5-5
FOD814: 20–300% FOD817: 50–600%
FOD814A: 50–150% FOD817A: 80–160%
FOD817B: 130–260%
FOD817C: 200–400%
FOD817D: 300–600%
FOD814A300 Applications