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FMG2G150US60E

FMG2G150US60E

FMG2G150US60E

ON Semiconductor

FMG2G150US60E datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available on our website

SOT-23

FMG2G150US60E Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Chassis Mount
Package / Case 7PM-GA
Supplier Device Package 7PM-GA
Operating Temperature-40°C~150°C TJ
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Half Bridge
Power - Max 500W
Input Standard
Current - Collector Cutoff (Max) 250μA
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 150A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 150A
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 12.84nF @ 30V
In-Stock:4130 items

FMG2G150US60E Product Details

FMG2G150US60E Description

Fairchilds Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

FMG2G150US60E Features

? UL Certified No. E209204

? Short Circuit rated 10us @ TC = 100°C, VGE = 15V

? High Speed Switching

? Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 150A

? High Input Impedance

? Fast & Soft Anti-Parallel FWD

FMG2G150US60E Application

? AC & DC Motor Controls

? General Purpose Inverters

? Robotics

? Servo Controls

? UPS


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