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FJV3109RMTF

FJV3109RMTF

FJV3109RMTF

ON Semiconductor

FJV3109RMTF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

SOT-23

FJV3109RMTF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3 (TO-236)
PackagingTape & Reel (TR)
Published 2002
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Voltage - Rated DC 40V
Max Power Dissipation200mW
Current Rating100mA
Polarity NPN
Element ConfigurationSingle
Power Dissipation200mW
Power - Max 200mW
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage40V
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Resistor - Base (R1) 4.7 kOhms
Continuous Collector Current 100mA
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:4138 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.054291$0.054291
500$0.039920$19.96
1000$0.033266$33.266
2000$0.030520$61.04
5000$0.028523$142.615
10000$0.026533$265.33
15000$0.025660$384.9
50000$0.025232$1261.6

FJV3109RMTF Product Details

FJV3109RMTF Description


The ON Semiconductor FJV3109RMTF is an NPN Epitaxial Silicon Transistor with Bias Resistor



FJV3109RMTF Features


  • Built-in bias Resistor (R=4.7KΩ)

  • Complement to FJV4109R



FJV3109RMTF Applications


  • Switching circuit, Inverter, Interface circuit, Driver Circuit


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