FJPF5027RTU Overview
In this device, the DC current gain is 15 @ 200mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 2V ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.15MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
FJPF5027RTU Features
the DC current gain for this device is 15 @ 200mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz
FJPF5027RTU Applications
There are a lot of ON Semiconductor FJPF5027RTU applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
