Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FJE3303H1TU

FJE3303H1TU

FJE3303H1TU

ON Semiconductor

FJE3303H1TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJE3303H1TU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation20W
Current Rating1.5A
Frequency 4MHz
Base Part Number FJE3303
Number of Elements 1
Element ConfigurationSingle
Power Dissipation20W
Transistor Application SWITCHING
Gain Bandwidth Product4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 1.5A
Continuous Drain Current (ID) 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 500mA 2V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 500mA, 1.5A
Collector Emitter Breakdown Voltage400V
Transition Frequency 4MHz
Drain to Source Breakdown Voltage 700V
Collector Emitter Saturation Voltage3V
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
hFE Min 8
Height 11mm
Length 8mm
Width 3.25mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9732 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.088160$0.08816
500$0.064824$32.412
1000$0.054020$54.02
2000$0.049559$99.118
5000$0.046317$231.585
10000$0.043086$430.86
15000$0.041669$625.035
50000$0.040972$2048.6

FJE3303H1TU Product Details

FJE3303H1TU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 8 @ 500mA 2V.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 500mA, 1.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.In the part, the transition frequency is 4MHz.In extreme cases, the collector current can be as low as 1.5A volts.

FJE3303H1TU Features


the DC current gain for this device is 8 @ 500mA 2V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1.5A
a transition frequency of 4MHz

FJE3303H1TU Applications


There are a lot of ON Semiconductor FJE3303H1TU applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

Get Subscriber

Enter Your Email Address, Get the Latest News