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FGH40T65SHD-F155

FGH40T65SHD-F155

FGH40T65SHD-F155

ON Semiconductor

FGH40T65SHD-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGH40T65SHD-F155 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation268W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 268W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 80A
Reverse Recovery Time 31.8 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage650V
Test Condition 400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge72.2nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 19.2ns/65.6ns
Switching Energy 1.01mJ (on), 297μJ (off)
RoHS StatusROHS3 Compliant
In-Stock:4422 items

Pricing & Ordering

QuantityUnit PriceExt. Price
450$3.38411$1522.8495

FGH40T65SHD-F155 Product Details

FGH40T65SHD-F155 Description


FGH40T65SHD-F155 is a 650v IGBT. Using novel field stop IGBT technology, ON Semiconductor's new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications where low conduction and switching losses are essential. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor FGH40T65SHD-F155 is in the TO?247?3LD package with 268W power dissipation.



FGH40T65SHD-F155 Features


Maximum Junction Temperature: Tj =175°C

Positive Temperature Co-efficient for Easy Parallel Operating

High Current Capability

Low Saturation Voltage: VCE(sat)= 1.6 V(Typ.)@Ic=40A

100% of the Parts Tested for ILM (Note 1)

High Input Impedance

Fast Switching

Tighten Parameter Distribution

This Device is Pb-Free and is RoHS Compliant



FGH40T65SHD-F155 Applications


Solar Inverter

UPS

Welder

Telecom

ESS

PFC


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