FGH40T120SMD Description
The FGH40T120SMD Gate Bipolar Transistor, also known as an IGBT, is a three-terminal power semiconductor device that is known for its high efficiency and quick switching. By integrating an isolated gate FET for the control input and a bipolar power transistor as a switch in a single device, the FGH40T120SMD IGBT combines the straightforward gate-drive characteristics of MOSFETs with the high-current and low–saturation–voltage performance of bipolar transistors.
FGH40T120SMD Features
Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
100% of the Parts Tested for ILM(1)
High Input Impedance
FS Trench Technology, Positive Temperature Coefficient
High-Speed Switching
These Devices are Pb?Free and are RoHS Compliant
FGH40T120SMD Applications
Solar Inverter
Welder
UPS & PFC applications
