FGD3245G2-F085V Description
FGD3245G2-F085V transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGD3245G2-F085V MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor FGD3245G2-F085V has the common source configuration.
FGD3245G2-F085V Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
FGD3245G2-F085V Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
