FDZ191P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDZ191P Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-UFBGA, WLCSP
Number of Pins
6
Weight
54mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
PowerTrench®
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
85MOhm
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Terminal Form
BALL
Current Rating
-3A
Number of Elements
1
Power Dissipation-Max
1.9W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.5W
Turn On Delay Time
11 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
85m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
800pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3A Ta
Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V
Rise Time
10ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.5V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
50 ns
Continuous Drain Current (ID)
-3A
Threshold Voltage
600mV
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
3A
Drain to Source Breakdown Voltage
-20V
Height
370μm
Length
1.5mm
Width
1mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1637 items
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FDZ191P Product Details
FDZ191P Description
The ON FDZ191P P-Channel MOSFET is designed on an innovative 1.5V PowerTrench process with state-of-the-art "low pitch" WLCSP packaging method, reducing PCB area and rDS (on). This sophisticated WLCSP MOSFET incorporates a packaging innovation, allowing the device to combine superior thermal transfer properties, ultra-low profile packing, low gate charge, and low rDS(on).
FDZ191P Features
Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Ultra-thin package: less than 0.65 mm height when mounted to PCB RoHS Compliant Max rDS(on) = 85mΩ at VGS = -4.5V, ID = -1A Max rDS(on) = 123mΩ at VGS = -2.5V, ID = -1A Max rDS(on) = 200mΩ at VGS = -1.5V, ID = -1A
