FDW256P Description
This P-channel MOSFET is a rugged gate version of Xiantong Semiconductor's advanced power trench process. It is optimized for power management applications that require a wide range of rated driving voltages (4.5V-25V).
FDW256P Applications
· Battery protection
· DC/DC conversion
· Power management
· Load switch
FDW256P Features
· –8 A, –30 V RDS(ON) = 13.5 mW @ VGS = –10 V
RDS(ON) = 20 mW @ VGS = –4.5 V
· Extended VGSS range (±25V) for battery applications
· High performance trench technology for extremely
low RDS(ON)
· Low profile TSSOP-8 package
