FDV302P Description
Our exclusive high cell density DMOS technology is used to make the FDV302P transistor. This extremely dense technique is specifically designed to reduce on-state resistance. This device was created specifically to replace digital transistors in low-voltage applications. This single P-channel FET can replace numerous digital transistors with various bias resistors, such as the DTCx and DCDx series, because bias resistors are not required.
FDV302P Features
Gate drive needs are very minimal, allowing direct operation in 3V circuits. VGS(th) < 1.5V.
For ESD toughness, use a Gate-Source Zener.
Human Body Model >6kV
SOT-23 surface mount package is a compact industry standard.
One DMOS FET can replace multiple PNP digital transistors (DTCx and DCDx).
FDV302P Applications
FDV302P is intended for general use and can be used in a variety of situations.
