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FDU8896

FDU8896

FDU8896

ON Semiconductor

FDU8896 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDU8896 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature-55°C~175°C TJ
PackagingTube
Series PowerTrench®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 80W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.7m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2525pF @ 15V
Current - Continuous Drain (Id) @ 25°C 17A Ta 94A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS StatusRoHS Compliant
In-Stock:12256 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.67000$0.67
500$0.6633$331.65
1000$0.6566$656.6
1500$0.6499$974.85
2000$0.6432$1286.4
2500$0.6365$1591.25

FDU8896 Product Details

FDU8896 Description


FDU8896 is a 30v N-Channel PowerTrench? MOSFET. This N-Channel MOSFET FDU8896 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The onsemi FDU8896 has been optimized for low gate charge, low rDS(ON), and fast switching speed.



FDU8896 Features


  • RDS(ON) = 5.7 mΩ, VGS = 10V, ID = 35V

  • RDS(ON) = 6.8 mΩ, VGS = 4.5V, ID = 35V

  • High-performance trench technology for extremely low RDS(ON)

  • Low gate charge

  • High power and current handling capability



FDU8896 Applications


  • Cellular phones

  • Laptop computers

  • Photovoltaic systems

  • Wind turbines

  • Shunt voltage regulator and the series voltage regulator


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