FDU6680 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDU6680 Datasheet PDF
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Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
I-PAK
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2004
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
3.3W Ta 56W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
10mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1230pF @ 15V
Current - Continuous Drain (Id) @ 25°C
12A Ta 46A Tc
Gate Charge (Qg) (Max) @ Vgs
18nC @ 5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
In-Stock:10114 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.638757
$4.638757
10
$4.376185
$43.76185
100
$4.128477
$412.8477
500
$3.894790
$1947.395
1000
$3.674330
$3674.33
FDU6680 Product Details
FDU6680 Description
FDU6680 is a 30V N-Channel PowerTrench? MOSFET. The N-Channel MOSFET FDU6680 is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been specially tailored to minimize the on-state resistance and yet maintain a low gate charge for superior switching performance. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDU6680 is in the TO-220-3 package with 3.3W power dissipation.
FDU6680 Features
46 A, 30 V RDS(ON) = 10 mW @ VGS = 10 V
RDS(ON) = 15 mW @ VGS = 4.5 V
Low gate charge
Fast Switching Speed
High-performance trench technology for extremely low RDS(ON)
Drain-Source Voltage: 30v
FDU6680 Applications
Cellular phones
Laptop computers
Photovoltaic systems
Wind turbines
Shunt voltage regulator and the series voltage regulator
Motor Drives
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