Name: FDS9435A
Brand: ON Semiconductor
SKU: FDS9435A
Price: 0.63000 USD
Availability: InStock

new-10%

FDS9435A

Manufacturer part number:FDS9435A

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 50m Ω @ 5.3A, 10V ±25V 528pF @ 15V 14nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)

Case Package:SOT-23

Datasheet:FDS9435A Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 2 hours ago)
Factory Lead Time	18 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
Published	2001
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	Other Transistors
Voltage - Rated DC	-30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-5.3A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	50m Ω @ 5.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	528pF @ 15V
Current - Continuous Drain (Id) @ 25°C	5.3A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	-5.3A
Threshold Voltage	-1.7V
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.05Ohm
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	-30V
Max Junction Temperature (Tj)	175°C
Nominal Vgs	-1.7 V
Height	1.75mm
Length	5mm
Width	4mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDS9435A Product Details

FQB1P50TM Description

The FQB1P50TM P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQB1P50TM Features

Low Gate Charge (Typ. 11 nC)
Low Crss (Typ. 6.0 pF)
100% Avalanche Tested
RoHS Compliant
Lead Free
Vgs(th) (Max) @ Id: 5V @ 250 μA
FQB1P50TM Applications

Switch electronic signals
Oscillators
Modulators
Detectors
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid