Name: FDS9412
Brand: ON Semiconductor
SKU: FDS9412
Price: 0.25000 USD
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2000
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	7.9A
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Power Dissipation	2.5W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	22m Ω @ 7.9A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	830pF @ 15V
Current - Continuous Drain (Id) @ 25°C	7.9A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	7.9A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free

FDS9412 Product Details

FDS9412 Description

FDS9412 is a 30v Single N-Channel Enhancement Mode Field Effect Transistor. The N-Channel Logic Level MOSFET FDS9412 is produced using Fairchild Semiconductor's advanced Power' Trench process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. The FDS9412 is particularly suited for low voltage applications such as notebook computer DC-DC converter where fast switching, low conduction loss, and high efficiency are needed.

FDS9412 Features

7.9A, 30V. RDS(on) = [email protected] VGS =10V

RDS(on) = [email protected] VGS = 4.5V

Very low gate charge.
High switching speed
High-performance trench technology for extremely low RDS(on)
High power and current handling capability in a widely used surface mount package.