FDS6930B Description
These N-channel logic level MOSFET are produced using advanced power channel semiconductor processes, and in particular are considered to reduce on-resistance and maintain excellent switching performance.
These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS6930B Features
5.5A,30 V.RDS(ON)=38mΩ @VGs=10V
Rps(ON)=50mΩ@VGs=4.5V
Fast switching speed Low gate charge
High performance trench techinologyfor extremely lowRDS(ON)
High power and current handling capability
FDS6930B Applications
low-voltage and battery-powered applications
