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FDPF2D3N10C

FDPF2D3N10C

FDPF2D3N10C

ON Semiconductor

FDPF2D3N10C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDPF2D3N10C Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature-55°C~175°C TJ
Series PowerTrench®
Pbfree Code yes
Part StatusActive
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 45W Tc
Element ConfigurationSingle
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 700μA
Input Capacitance (Ciss) (Max) @ Vds 11180pF @ 50V
Current - Continuous Drain (Id) @ 25°C 222A Tc
Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusRoHS Compliant
In-Stock:2068 items

Pricing & Ordering

QuantityUnit PriceExt. Price

FDPF2D3N10C Product Details

FDPF2D3N10C Description


The FDPF2D3N10C is a single channel MV MOSFET with a voltage of 100V from ON Semiconductor. FDPF2D3N10C operates between -55°C and 175°C, with a maximum power dissipation of 45W Tc. The TO-220-3 Full Pack packaging method is available. Onsemi's innovative POWERTRENCH process utilizes Shielded Gate technology to generate this channel MV MOSFET. With the best-in-class soft body diode, this method has been designed to minimize on-state resistance while maintaining exceptional switching performance.


FDPF2D3N10C Features


Max rDS(on) = 2.3 m at VGS = 10 V, ID = 100 A

Extremely Low Reverse Recovery Charge, Qrr

100% UIL Tested

RoHS Compliant


FDPF2D3N10C Applications


Synchronous Rectification for ATX / Server / Telecom PSU

Motor Drives and Uninterruptible Power Supplies

Micro Solar Inverter


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