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FDPC8016S

FDPC8016S

FDPC8016S

ON Semiconductor

FDPC8016S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDPC8016S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 207.7333mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation42W
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Number of Channels 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time13 ns
Power - Max 2.1W 2.3W
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2375pF @ 13V
Current - Continuous Drain (Id) @ 25°C 20A 35A
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time4ns
Fall Time (Typ) 3 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 75A
Avalanche Energy Rating (Eas) 73 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 750μm
Length 5.1mm
Width 6.1mm
RoHS StatusROHS3 Compliant
In-Stock:3448 items

Pricing & Ordering

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FDPC8016S Product Details

FDPC8016S Description


In a dual package, this device contains two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.



FDPC8016S Features


Maximum RDS(on) at VGS = 10 V, ID = 35 A is 1.4 m.


? Maximum RDS(on) at VGS = 4.5 V, ID = 32 A is 1.7 m.


? Reduced Rise/Fall Times Due to Low Inductance Packaging Lead to Lower Switching Losses


? Optimal Layout for Lower Circuit Inductance and Reduced Switch Node Ringing is Made Possible by MOSFET Integration


? These devices are RoHS compliant and Pb-free.



FDPC8016S Applications


? Computer


? Interactions


? Multi-Use Point of Load


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