FDN357N Description
FDN357N is a type of N-channel logic-level enhancement-mode field-effect transistor provided by ON Semiconductor based on its proprietary, high cell density, DMOS technology which makes this device capable of minimizing on-state resistance. It is well suited for low-voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits requiring fast switching, and low in-line power loss.
FDN357N Features
Extremely low RDS(ON)
High-density cell design
Low gate charge
Proprietary, high cell density, DMOS technology
Available in the SOT-23 package
FDN357N Applications
Notebook computers
Portable phones
PCMCIA cards
Battery-powered circuits
