FDN352AP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDN352AP Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
180MOhm
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-1.3A
Number of Elements
1
Number of Channels
1
Voltage
30V
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Current
13A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
4 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
180m Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
150pF @ 15V
Current - Continuous Drain (Id) @ 25°C
1.3A Ta
Gate Charge (Qg) (Max) @ Vgs
1.9nC @ 4.5V
Rise Time
15ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±25V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
10 ns
Continuous Drain Current (ID)
-1.3A
Threshold Voltage
-2V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
-30V
Dual Supply Voltage
-30V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
-2 V
Height
1.22mm
Length
2.92mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
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FDN352AP Product Details
FDN352AP Description
FDN352AP belongs to the family of single P-channel PowerTrench? MOSFET. Based on the advanced power trench process, it is able to achieve the minimum of the on-state resistance and maintain low gate charge for superior switching performance. It is designed to be used for low-voltage and battery-powered applications in a small surface-mounted package requiring low in-line power loss, such as notebook computer power management.
FDN352AP Features
Advanced power trench process Drain-source voltage of -30V Operating temperature of -55 °C to 150 °C Available in the high power version of industry standard SOT-23 package
FDN352AP Applications
Low-voltage and battery-powered applications Notebook computer power management
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