FDMS86104 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDMS86104 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Voltage
100V
Power Dissipation-Max
2.5W Ta 73W Tc
Element Configuration
Single
Current
16A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
73W
Case Connection
DRAIN
Turn On Delay Time
8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
24m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
923pF @ 50V
Current - Continuous Drain (Id) @ 25°C
7A Ta 16A Tc
Gate Charge (Qg) (Max) @ Vgs
16nC @ 10V
Rise Time
3.5ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
3.2 ns
Turn-Off Delay Time
14.3 ns
Continuous Drain Current (ID)
16A
Threshold Voltage
2.9V
JEDEC-95 Code
MO-240AA
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.024Ohm
Drain to Source Breakdown Voltage
100V
Avalanche Energy Rating (Eas)
96 mJ
Height
1.05mm
Length
5mm
Width
6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
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FDMS86104 Product Details
FDMS86104 Description
The FDMS86104 N-Channel MOSFET is produced using On Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
FDMS86104 Features
Shielded Gate MOSFET Technology
Advanced Package and Silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
No SVHC
Lead Free
FDMS86104 Applications
DC-DC Conversion
Switching Application
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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